TYN267PN Integrated Power MOSFET
Integrated 700 V power MOSFET with auto-restart and EMI reduction
- Spec name: Integrated 700 V power MOSFET
- Spec name: Oscillator, high voltage switched current source
- Spec name: Current limit and thermal shutdown circuitry
- Spec name: Start-up and operating power from DRAIN pin
- Spec name: Auto-restart and frequency jittering
- Spec name: Line under voltage sense
- Spec name: Fully integrated auto-restart for short circuit protection
- Spec name: Programmable line under voltage detect feature
Key Features:
- Integrated auto-restart for fault protection
- Practically eliminates audible noise
- Prevents power on/off glitches
- Dramatically reduces EMI
The TYN267PN integrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit, and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derived directly from the voltage on the DRAIN pin, eliminating the need for a bias winding and associated circuitry. The device incorporates auto-restart, line under voltage sense, and frequency jittering to enhance functionality.
An innovative design minimizes audio frequency components in the ON/OFF control scheme, practically eliminating audible noise with standard transformer construction. The fully integrated auto-restart circuit limits output power during fault conditions, reducing component count and feedback circuitry cost. Additionally, the optional line sense resistor programs a line under voltage threshold, eliminating power down glitches caused by slow discharge of input capacitors.
The operating frequency of 132 kHz is jittered to reduce both quasi-peak and average EMI, minimizing filtering cost. The TYN267PN offers very tight tolerances, negligible temperature variation, and reduced transformer size for low cost and small size applications. It is a low component count switcher solution with an expanded scalable device family for low system cost.
Specifications:
- VBP BYPASS Pin Voltage: 5.6-6.15 V
- VBPH BYPASS Pin Voltage Hysteresis: 0.80-1.2 V
- tLEB Leading Edge Blanking Time: 170-215 ns
- TSD Thermal Shutdown Temperature: 125-150 °C
- TSHD Thermal Shutdown Hysteresis: 70 °C
Related Document: TYN267PN IC Data Sheet
*Images are for illustration only; actual product may vary.