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TIP41C
Three-layer NPN device with low saturation voltage for amplifying collector current
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 40VDC
- Collector-Base Voltage (VCBO): 40VDC
- Continuous Collector Current (Ic): 6ADC
- Continuous Base Current (Ib): 2ADC
- Emitter-Base Voltage (VEBO): 5VDC
- Power Dissipation (Pd): 65W
- Operating Temperature Range: -65 - 150°C
- DC Current Gain (hFE): 15-75
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
TIP41C is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE. It is easy to carry and handle.
Related Documents: TIP41C Transistor Datasheet
Images are for illustration only; actual product may vary.