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TIP35C
A three-layer NPN device with low saturation voltage and high current capabilities.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 100V
- Collector-Base Voltage (VCBO): 100V
- Continuous Collector Current (IC): 25A
- Continuous Base Current (IB): 5A
- Emitter-Base Voltage (VEBO): 5V
- Power Dissipation (Pd): 125W
- Operating Temperature Range: -65 to 150°C
- DC Current Gain (hFE): 10-50
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
TIP35C is a three-layer NPN device where the collector current IC is a function of the base current IB. A change in the base current results in a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.
Easy to carry and handle, the TIP35C is ideal for various applications requiring high current capabilities and low distortion designs.
For more details or bulk pricing inquiries, please contact our sales team at sales02@thansiv.com or call +91-8095406416.
* Images are for illustration only; actual product may vary.