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TIP120 Transistor
Three-layer NPN device with low saturation voltage and high safe operating area.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 60V
- Collector-Base Voltage (VCBO): 60V
- Continuous Collector Current (IC): 5A
- Continuous Base Current (IB): 0.12A
- Emitter-Base Voltage (VEBO): 5V
- Power Dissipation (Pd): 65W
- Operating Temperature Range: -65 to 150°C
- DC Current Gain (hFE): 1000
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
TIP120 is a three-layer NPN device within the working range. The collector current IC is a function of the base current IB, with a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE. It is easy to carry and handle.
Related Documents: TIP120 Transistor Datasheet
*Images are for illustration only; actual product may vary.