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SL100 Transistor
A three-layer NPN device with high ruggedness and simple drive requirements.
- Transistor Polarity: NPN
- Collector–Emitter Voltage (VCEO): 50V
- Collector–Base Voltage (VCBO): 60V
- Continuous Collector Current (Ic): 0.5A
- Emitter Base Voltage (VEBO): 5V
- Power Dissipation (Pd): 800mW
- Operating Temperature Range: -65 - 200°C
- Output Capacitance (Cobo): 20pF
- DC Current Gain (hFE): 40-300
Features:
- High Ruggedness
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
SL100 is a three-layer NPN device. Within the working range, the collector current IC is a function of the base current IB. A change in the base current gives a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.
Easy to carry and handle.
Related Documents: SL100 Transistor Datasheet
Images are for illustration only; actual product may vary.