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SK100 Three Layer PNP Transistor
Three layer PNP device with high ruggedness and simple drive requirements
- Transistor Polarity: PNP
- Collector-Emitter Voltage (VCEO): 50V
- Collector-Base Voltage (VCBO): 60V
- Continuous Collector Current (Ic): 0.5A
- Emitter Base Voltage (VEBO): 5V
- Power Dissipation (Pd): 800mW
- Operating Temperature Range: -65 - 200°C
- Output Capacitance (Cobo): 20pF
- DC Current Gain (hFE): 40-300
Features:
- High ruggedness
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
SK100 is a three layer PNP device within the working range. The collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE. Easy to carry and handle.
Related Documents: SK100 Transistor Datasheet
* Images are for illustration only; actual product may vary.