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SI2308 SMD N-Channel 60-V (D-S) MOSFET
Halogen-free TrenchFET® Power MOSFET with 100% Rg and UIS Testing
- Spec name: Value
- VDSS Drain-Source Voltage: 60 V
- VGS Gate-Source Voltage: ± 20 V
- ID Drain Current Continuous: 2.3 A
- IDM Drain Current Pulsed (tp?10µS): 8 A
- PD Drain Power Dissipation: 1.66 W
- TJ Operating Junction Temperature: -55 to +150 °C
- TSTG Storage Temperature Range:
Top Features:
- Halogen-free per IEC 61249-2-21
- TrenchFET® Power MOSFET technology
- 100% Rg and UIS Testing
Application: Battery Switch, DC/DC Converter
Related Document: S12308 SMD Data Sheet
*Images are for illustration only; actual product may vary.