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S8550 Transistor
A three-layer PNP device with low saturation voltage and high safe operating area.
- Transistor Polarity: PNP
- Collector-Emitter Voltage (VCEO): 20V
- Collector-Base Voltage (VCBO): 30V
- Continuous Collector Current (Ic): 700mA
- Emitter-Base Voltage (VEBO): 5V
- Operating Temperature Range: -65 to 150°C
- DC Current Gain (hFE): 120-400
- Current Gain Bandwidth (fT): 100MHz
- Output Capacitance (Cob): 9pF
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
S8550 is a three-layer PNP device within the working range. The collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE. Easy to carry and handle.
Related Documents: S8550 Transistor Datasheet
* Images are for illustration only; actual product may vary.