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P55NF06 Power MOSFETs
High-efficiency MOSFETs for isolated DCDC converters
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 60V
- Continuous Drain Current (Id): 50A
- Drain-Source Resistance (Rds On): 0.018Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 60 nC
- Operating Temperature Range: -55 to 175°C
- Power Dissipation (Pd): 110W
Top Features:
- STripFET technology for minimized input capacitance
- 100% avalanche tested
- Application-oriented characterization
- Suitable for switching applications
P55NF06 power MOSFETs, developed by STMicroelectronics using the unique STripFET process, are ideal for use as the primary switch in advanced high-efficiency isolated DCDC converters in telecom, computer, and low gate charge driving applications.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or +91-8095406416.
Images are for illustration only; actual product may vary.