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P30NF10 Power MOSFET
High-density, rugged power MOSFET with exceptional characteristics
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 35A
- Drain-Source Resistance (Rds On): 0.045 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 55 nC
- Operating Temperature Range: -55°C to 175°C
- Power Dissipation (Pd): 115W
Features
- Exceptional dv/dt capability
- 100% avalanche tested
- Application-oriented characterization
- Switching application
The P30NF10 is a power MOSFET that utilizes STMicroelectronics' unique "Single Feature Size™" strip-based process. With high packing density, low on-resistance, and rugged avalanche characteristics, this transistor offers remarkable manufacturing reproducibility due to less critical alignment steps.
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*Images are for illustration only; actual product may vary.