MMBT5551 NPN High Voltage Transistor
Bipolar Transistors for High Voltage Applications in SOT-23 Package
- Product Category: Bipolar Transistors - BJT
- Mounting Style: SMD/SMT
- Package/Case: SOT-23-3
- Transistor Polarity: NPN
- Configuration: Single
- Collector-Emitter Voltage VCEO Max: 160 V
- Collector-Base Voltage VCBO: 180 V
- Emitter-Base Voltage VEBO: 6 V
- Maximum DC Collector Current: 0.6 A
- Gain Bandwidth Product fT: 300 MHz
- Maximum Operating Temperature: +150°C
- Series: MMBT5551
- Continuous Collector Current: 0.6 A
- DC Collector/Base Gain hFE Min: 80 at 1 mA, 80 at 10 mA, 30 at 50 mA (all at 5 V)
- Minimum Operating Temperature: -55°C
- Pd - Power Dissipation: 300 mW
Key Features:
- High Voltage NPN Transistor
- Suitable for SMD/SMT Mounting
- Wide Operating Temperature Range
- Low Power Dissipation
The MMBT5551 NPN High Voltage Transistor is designed for high voltage applications with a maximum VCEO of 160V and a gain bandwidth product of 300 MHz. It comes in a SOT-23-3 package, suitable for surface-mounted device designs. With a continuous collector current of 0.6 A and a maximum operating temperature of +150°C, this transistor ensures reliable performance in various environments.
Whether you need to amplify signals or control high voltage circuits, the MMBT5551 offers a versatile solution with its NPN configuration and high collector-emitter voltage rating. With a minimum operating temperature of -55°C, this transistor can also withstand low-temperature conditions, making it suitable for a wide range of applications.
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*Images are for illustration only; actual product may vary.