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MJE3055T
Three-layer NPN or PNP device with high DC current gain and low saturation voltage.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 60VDC
- Collector-Base Voltage (VCBO): 70VDC
- Emitter-Base Voltage (VEBO): 5VDC
- Continuous Collector Current (Ic): 10ADC
- Continuous Base Current (Ib): 6ADC
- Power Dissipation (Pd): 75W
- Operating Temperature Range: -55 - 150°C
- DC Current Gain (hFE): 20-70
Features:
- High DC current gain
- Low collector-emitter saturation voltage
- High current-gain-bandwidth product
- Annular construction for low leakage
These devices are Pb-Free and are RoHS compliant.
Related Documents: MJE3055T Transistor Datasheet
* Images are for illustration only; actual product may vary.