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MJE200
A three-layer NPN device with high DC current gain and low collector-emitter saturation voltage.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 40VDC
- Collector-Base Voltage (VCBO): 25VDC
- Emitter-Base Voltage (VEBO): 8VDC
- Continuous Collector Current (Ic): 5ADC
- Continuous Base Current (Ib): 1ADC
- Power Dissipation (Pd): 15W
- Operating Temperature Range: -65 - 150°C
- DC Current Gain (hFE): 45-180
Features:
- High DC current gain
- Low collector-emitter saturation voltage
- High current-gain-bandwidth product
- Annular construction for low leakage
MJE200 is a three-layer NPN device where the collector current IC is a function of the base current IB. A change in the base current results in a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.
These devices are Pb-Free and RoHS compliant.
Related Documents: MJE200 Transistor Datasheet
* Images are for illustration only; actual product may vary.