×
MJ15004
Three-layer PNP transistor for low distortion designs
- Transistor Polarity: PNP
- Collector-Emitter Voltage (VCEO): 140VDC
- Collector-Base Voltage (VCBO): 140VDC
- Emitter-Base Voltage (VEBO): 5VDC
- Continuous Collector Current (IC): 20ADC
- Continuous Base Current (IB): 5ADC
- Continuous Emitter Current (IE): 25ADC
- Power Dissipation (Pd): 250W
- Operating Temperature Range: -65 - 200°C
- DC Current Gain (hFE): 150
Features:
- High safe operating area
- For low distortion complementary designs
- High DC current gain
- Simple drive requirements
MJ15004 is a three-layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.
Notable for its high safe operating area, this transistor is suitable for low distortion complementary designs, with a high DC current gain. It has simple drive requirements and is easy to carry and handle.
For more details or interested in bulk pricing, Reach out to our sales team directly - sales02@thansiv.com, +91-8095406416
* Images are for illustration only; actual product may vary.