IRL3103 MOSFET - 30V 64A N-Channel Power MOSFET TO-220 Package
High-performance N-Channel Power MOSFET with advanced technology
- Drain-to-Source Breakdown Voltage: 30V
- Breakdown Voltage Temp. Coefficient: 0.028V/°C
- Gate Threshold Voltage: 1.0V
- Forward Transconductance: 22S
- Gate-to-Source Forward Leakage: 100nA
Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
The IRL3103 MOSFET is a high-performance N-Channel Power MOSFET designed for various power applications. With a Drain-to-Source Breakdown Voltage of 30V and a maximum Forward Transconductance of 22S, this MOSFET ensures efficient power management. It operates at a wide temperature range of up to 175°C, making it suitable for diverse environments.
The MOSFET features Advanced Process Technology, ensuring reliable performance and fast switching capabilities. Additionally, it has an Ultra Low On-Resistance, enhancing power efficiency. The device is fully Avalanche Rated, providing protection during voltage spikes.
Whether you need to control power in automotive, industrial, or consumer electronics applications, the IRL3103 MOSFET is a versatile solution that delivers high performance and durability.
* Images are for illustration only; actual product may vary.