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IRG4BC40UD Insulated Gate Bipolar Transistor
An ultrafast IGBT with optimized performance for various applications
- VCES: 600 V
- IC @ TC = 25°C: 40 A
- IC @ TC = 100°C: 20 A
- ICM Pulsed Collector Current: 160 A
- ILM Clamped Inductive Load Current: 160 A
- IF @ TC = 100°C Diode Continuous Forward Current: 15 A
- IFM Diode Maximum Forward Current: 160 A
- VGE Gate-to-Emitter Voltage: ± 20 V
- PD @ TC = 25°C Maximum Power Dissipation: 160 W
- PD @ TC = 100°C: 65 W
- TJ Operating Junction and: -55 to +150 °C
- Tstg Storage Temperature Range: Not Specified
- Soldering Temperature: 300 (0.063 in. (1.6mm) from case)
- Mounting Torque: 10 lbf•in (1.1 N•m)
Features:
- UltraFast: Optimized for high operating frequencies 8-40 kHz
- Generation 4 IGBT design with higher efficiency
- Co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery diodes
- Industry standard TO-247AC package
The IRG4BC40UD is an Insulated Gate Bipolar Transistor with an Ultrafast Soft Recovery Diode, designed as a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs. This Generation 4 IGBT offers the highest efficiencies available and is optimized for specific application conditions.
The HEXFRED diodes are optimized for performance with IGBTs, and the minimized recovery characteristics require less or no snubbing.
For further details, refer to the related document: IRG4BC40UD IGBT Data Sheet
* Images are for illustration only; actual product may vary.