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IRFZ48N Power MOSFET
Efficient and reliable power MOSFET for various applications
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 64A
- Drain-Source Resistance (Rds On): 0.014Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 81 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 130W
Top Features:
- Advanced process technology
- Ultra Low On-Resistance
- Fully Avalanche Rated
- 175 °C operating temperature
IRFZ48N utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Related Documents: IRFZ48N MOSFET Datasheet
* Images are for illustration only; actual product may vary.