×
IRFZ44N
HEXFET® Power MOSFET for Automotive Applications
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 49A
- Drain-Source Resistance (Rds On): 0.0175Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 63 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 94W
Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
Specifically designed for Automotive applications, the IRFZ44N HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. With a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating, this design is highly efficient and reliable for Automotive applications and various other uses.
Related Documents: IRFZ44N MOSFET Datasheet
* Images are for illustration only; actual product may vary.