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IRFP460 High Voltage MOSFET
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 20A
- Drain-Source Resistance (Rds On): 0.24Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 124 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 280W
Top Features:
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
The IRFP460 MOSFET is a new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism. It offers outstanding low on-resistance and lower gate charge performance, tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. The IRFP460 is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
For more details, refer to the IRFP460 MOSFET datasheet.
*Images are for illustration only; actual product may vary.