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IRFP4568 Power MOSFET
Advanced Power MOSFET with Low On-Resistance and High Efficiency
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 150V
- Continuous Drain Current (Id): 171A
- Drain-Source Resistance (Rds On): 5.9mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 227 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 517W
Top Features:
- Advanced Planar Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- Fast Switching
IRFP4568 Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Related Documents: IRFP4568 MOSFET Datasheet
Images are for illustration only; actual product may vary.