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IRFP450 N-Channel Power MOSFET
Designed for high-power applications with fast switching speeds.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 14A
- Drain-Source Resistance (Rds On): 370mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 77 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 200W
Top Features:
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
The IRFP450 N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is ideal for applications such as switching regulators, convertors, motor drivers, relay drivers, and high power bipolar switching transistors requiring low gate drive power. Can be directly operated from integrated circuits.
Related Documents: IRFP450 MOSFET Datasheet
*Images are for illustration only; actual product may vary.