×
IRFP2907 Power MOSFET
Designed for Automotive Applications
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 209A
- Drain-Source Resistance (Rds On): 4.5mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 620 nC
- Operating Temperature Range: -55 to 175°C
- Power Dissipation (Pd): 470W
Top Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
Specifically designed for Automotive applications, the IRFP2907 Power MOSFET features a Stripe Planar design of HEXFET®. With an operating temperature of 175°C, fast switching speed, and improved repetitive avalanche rating, this MOSFET is highly efficient and reliable for Automotive as well as various other applications.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or +91-8095406416.
* Images are for illustration only; actual product may vary.