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IRFP260N
New generation high voltage MOSFET with advanced charge balance mechanism
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 50A
- Drain-Source Resistance (Rds On): 0.04Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 234 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 300W
Top Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
IRFP260N is a part of the new generation of high voltage MOSFETs that utilize an advanced charge balance mechanism. This innovative technology minimizes conduction loss, provides superior switching performance, and can withstand extreme dv/dt rate and higher avalanche energy. It is ideal for various AC/DC power conversion applications in switching mode operation, enabling system miniaturization and enhancing efficiency.
For more details or bulk pricing inquiries, please contact our sales team directly at sales02@thansiv.com or call +91-8095406416.
Images are for illustration only; actual product may vary.