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IRFP240 High Voltage MOSFET
New generation MOSFET with advanced charge balance mechanism for superior performance.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 20A
- Drain-Source Resistance (Rds On): 0.18Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 150W
Top Features:
- Dynamic dV/dt Rating
- Repetitive avalanche rated
- Isolated central mounting hole
- Fast switching
IRFP240 is the next step in high voltage MOSFET technology. It offers exceptional low on-resistance and reduced gate charge for enhanced performance. Ideal for AC/DC power conversion in switching mode applications, it ensures efficiency and system miniaturization.
Compliant with RoHS directive 2002/95/EC, this MOSFET provides ease of paralleling, simple drive requirements, and can withstand extreme dv/dt rate and higher avalanche energy.
For more details, refer to the IRFP240 MOSFET Datasheet.
Images are for illustration only; actual product may vary.