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IRFP150N
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 42A
- Drain-Source Resistance (Rds On): 0.036Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 110 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 160W
Features:
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
IRFP150N is the new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This technology minimizes conduction loss, provides superior switching performance, and can withstand extreme dv/dt rate and higher avalanche energy. It is ideal for various AC/DC power conversion in switching mode operations, enabling system miniaturization and higher efficiency.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or call +91-8095406416.
*Images are for illustration only; actual product may vary.