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IRFP140N
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 33A
- Drain-Source Resistance (Rds On): 0.052Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 94 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 140W
Top Features:
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
The IRFP140N is designed for various AC/DC power conversions in switching mode operations, offering system miniaturization and higher efficiency. The MOSFET implements an advanced charge balance mechanism for exceptional low on-resistance and reduced gate charge performance. Its technology is optimized to minimize conduction loss, provide superior switching capabilities, and endure extreme dv/dt rates and higher avalanche energies.
For more detailed information, please refer to the IRFP140N MOSFET datasheet.
*Images are for illustration only; actual product may vary.