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IRFBC30 High Voltage MOSFET
New generation MOSFET with outstanding performance
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 3.6A
- Drain-Source Resistance (Rds On): 2.2Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 31 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 74W
Top Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
IRFBC30 is the new generation of high voltage MOSFET family, utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. The technology minimizes conduction loss, ensures superior switching performance, and withstands extreme dv/dt rate and higher avalanche energy. Ideal for various AC/DC power conversion in switching mode operation.
Compliant to RoHS Directive 2002/95/EC, its simple drive requirements and fast switching make it suitable for system miniaturization and higher efficiency.
Related Documents: IRFBC30 MOSFET Datasheet
*Images are for illustration only; actual product may vary.