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IRFB4321 High Voltage MOSFET
New generation MOSFET with advanced charge balance mechanism for superior performance.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 150V
- Continuous Drain Current (Id): 85A
- Drain-Source Resistance (Rds On): 15mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 110 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 350W
Top Features:
- High efficiency synchronous rectification in SMPS
- Uninterruptible power supply
- High speed power switching
- Hard switched and high frequency circuits
IRFB4321 is a new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This technology minimizes conduction loss, provides superior switching performance, and withstands extreme dv/dt rate and higher avalanche energy. It is suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
For more details or bulk pricing, contact our sales team at sales02@thansiv.com or call +91-8095406416.
*Images are for illustration only; actual product may vary.