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IRF9Z24 High Voltage MOSFET
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -60V
- Continuous Drain Current (Id): -11A
- Drain-Source Resistance (Rds On): 0.28Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 19 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 60W
Top Features:
- Dynamic dV/dt rating
- 100% avalanche rated
- Fast switching
- Ease of paralleling
The IRF9Z24 is designed for various AC/DC power conversion applications in switching mode for enhanced system miniaturization and efficiency. Utilizing advanced technology to minimize conduction loss, it offers superior switching performance and can withstand extreme dv/dt rates and higher avalanche energy. Suitable for system miniaturization and higher efficiency. Perfect for applications requiring P-Channel technology.
Related Documents: IRF9Z24 MOSFET Datasheet
* Images are for illustration only; actual product may vary.