IRF9630 MOSFET
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -6.5A
- Drain-Source Resistance (Rds On): 0.80 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 29 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 74W
Top Features:
- Dynamic dV/dt rating
- 100% avalanche rated
- Fast switching
- Ease of paralleling
IRF9630 is a part of the new generation of high voltage MOSFETs that utilize an advanced charge balance mechanism to achieve outstanding low on-resistance and lower gate charge performance. This technology minimizes conduction loss, provides superior switching performance, and can withstand extreme dv/dt rates and higher avalanche energy. It is ideal for various AC/DC power conversion applications in switching mode operation, enabling system miniaturization and higher efficiency.
The IRF9630 MOSFET is a P-Channel transistor with a -200V drain-source breakdown voltage, -6.5A continuous drain current, and 0.80 Ohms drain-source resistance. With a gate-source voltage of 20V, gate charge of 29 nC, and an operating temperature range of -55 to 150°C, it offers a power dissipation of 74W.
For more detailed information, refer to the IRF9630 MOSFET datasheet.
* Images are for illustration only; actual product may vary.