IRF9610 High Voltage MOSFET
New generation of high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -1.8A
- Drain-Source Resistance (Rds On): 3 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 11 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 20W
Top Features:
- Dynamic dV/dt rating
- 100% avalanche rated
- Fast switching
- Ease of paralleling
The IRF9610 is part of a new generation of high voltage MOSFETs that utilizes an advanced charge balance mechanism, delivering outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. The MOSFET is suitable for various AC/DC power conversion applications in switching mode operation, enabling system miniaturization and higher efficiency.
With simple drive requirements and advanced process technology, this P-Channel MOSFET offers reliable performance in demanding applications.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or call +91-8095406416.
*Images are for illustration only; actual product may vary.