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IRF9530 High Voltage MOSFET
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -100V
- Continuous Drain Current (Id): -14A
- Drain-Source Resistance (Rds On): 0.20Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 79W
Top Features:
- Dynamic dV/dt rating
- 100% avalanche rated
- Fast switching
- Ease of paralleling
IRF9530 is a part of a new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for exceptional low on-resistance and reduced gate charge performance. This technology aims to minimize conduction loss, provide excellent switching capabilities, and withstand high dv/dt rates and avalanche energy. Perfect for AC/DC power conversion in switching mode systems, enabling miniaturization and increased efficiency.
Compliant to RoHS directive 2002/95/EC, this P-Channel MOSFET offers a new high voltage benchmark ensuring reliable performance in various applications.
For more detailed technical information, refer to the IRF9530 MOSFET Datasheet.
*Images are for illustration only; actual product may vary.