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IRF840 High Voltage MOSFET
New generation MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 8A
- Drain-Source Resistance (Rds On): 850mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 39 nC
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (Pd): 125W
Top Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
IRF840 is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is ideal for various AC/DC power conversion in switching mode for miniaturization and higher efficiency.
Related Documents: IRF840 MOSFET Datasheet
Images are for illustration only; actual product may vary.