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IRF830 MOSFET - 500V 4.5A N-Channel Power MOSFET
Third generation power MOSFET with fast switching and low on-resistance.
- Drain-Source Breakdown Voltage Minimum: 500V
- Temperature Coefficient type: 0.061V/°C
- Gate-Source Threshold Voltage Minimum: 2.0V
- Gate-Source Threshold Voltage Maximum: 4.0V
- Gate-Source Leakage Maximum: +100nA
- Zero Gate Voltage Drain Current Maximum: 250µA
- Drain-Source On-State Resistance Maximum: 1.5?
- Forward Transconductance minimum: 2.5S
- Package Includes: 1 X IRF830 MOSFET - 500V 4.5A N-Channel Power MOSFET TO-220 Package
Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
Third generation power MOSFETs from the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
*Images are for illustration only; actual product may vary.