IRF720 Third Generation Power MOSFET
The best combination of fast switching, rugged design, low on-resistance, and cost-effectiveness.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 3.3A
- Drain-Source Resistance (Rds On): 1.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 20 nC
- Operating Temperature Range: -55°C to 150°C
- Power Dissipation (Pd): 50W
Top Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
The IRF720 third generation power MOSFETs are designed for all commercial-industrial applications requiring power dissipation levels of up to approximately 50W. The TO-220AB package ensures ruggedness and reliability.
With a drain-source breakdown voltage of 400V and a continuous drain current of 3.3A, these MOSFETs offer efficient performance. The low on-resistance of 1.8Ohms minimizes power loss, making them cost-effective for various designs.
The MOSFETs feature a gate-source voltage of 20V, gate charge of 20 nC, and operate within a wide temperature range of -55°C to 150°C. Their fast switching characteristics and simple drive requirements enhance overall design flexibility.
For more detailed specifications, refer to the related documents.
Images are for illustration only; actual product may vary.