IRF644 Third Generation Power MOSFETs
The best combination of speed, durability, low on-resistance, and cost-effectiveness.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 14A
- Drain-Source Resistance (Rds On): 0.28 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 68 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 125W
Top Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
The IRF644 third generation power MOSFETs provide fast switching capability, a ruggedized design, low on-resistance, and great cost-effectiveness. These features make them ideal for commercial-industrial applications requiring power dissipation up to approximately 125W. The TO-220AB package ensures universal compatibility.
With a drain-source breakdown voltage of 250V, continuous drain current of 14A, and a drain-source resistance of 0.28 Ohms, these MOSFETs offer reliable performance. The gate-source voltage of 20V and gate charge of 68 nC contribute to efficient operation. Operating in a temperature range of -55 to 150°C, these MOSFETs can handle power dissipation of up to 125W.
For more detailed information, you can refer to the IRF644 MOSFET datasheet.
*Images are for illustration only; actual product may vary.