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IRF640 Power MOSFET TO-220AB
Fast switching and rugged design for industrial applications
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 18A
- Drain-Source Resistance (Rds On): 0.15Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 150W
Top Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
IRF640 third generation power MOSFETs offer the best combination of fast switching, rugged design, low on-resistance, and cost-effectiveness. The TO-220AB package makes it suitable for all commercial-industrial applications up to 150W power dissipation levels.
If you require more details or are interested in bulk pricing, please contact our sales team at sales02@thansiv.com or +91-8095406416.
Images are for illustration only; actual product may vary.