×
IRF620 Power MOSFETs
Fast-switching, rugged design, low on-resistance, and cost-effective solution.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 5.2A
- Drain-Source Resistance (Rds On): 0.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 14 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 50W
- Package Type: TO-220AB
Top Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
IRF620 third generation power MOSFETs offer the best combination of fast switching, ruggedized design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications up to 50W power dissipation.
The simple drive requirements and compliance with the RoHS directive make it a versatile choice for various applications.
For more information, refer to the IRF620 MOSFET Datasheet.
Images are for illustration only; actual product may vary.