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IRF610 Power MOSFET
The best combination of speed, ruggedness, and cost-efficiency.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 3.3A
- Drain-Source Resistance (Rds On): 1.5 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 8.2 nC
- Operating Temperature Range: -55°C to 150°C
- Power Dissipation (Pd): 36W
Top Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
IRF610 third generation power MOSFETs offer unparalleled performance in various commercial and industrial applications with a power dissipation capability of up to 50W. The TO-220AB package ensures universal compatibility and reliability.
Compliant with the RoHS directive 2002/95/EC, these MOSFETs provide designers with the flexibility of simple drive requirements and easy paralleling, making them ideal for diverse projects.
For more detailed technical information, refer to the IRF610 MOSFET Datasheet.
Images are for illustration only; actual product may vary.