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IRF530 Third Generation Power MOSFET
Fast switching, rugged design, low on-resistance, and cost-effective
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 17A
- Drain-Source Resistance (Rds On): 90mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 37 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 70W
Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
IRF530 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Compliant to RoHS directive 2002/95/EC.
Related Documents: IRF530 MOSFET Datasheet
Images are for illustration only; actual product may vary.