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IRF510 Third Generation Power MOSFETs
Fast switching, rugged design, low on-resistance, and cost-effective
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 5.6A
- Drain-Source Resistance (Rds On): 540mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 8.3 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 43W
Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
The IRF510 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Need more details or interested in bulk pricing? Reach out to our sales team directly - sales02@thansiv.com +91-8095406416
*Images are for illustration only; actual product may vary.