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IRF4905
Fifth generation HEXFET® Power MOSFET with advanced processing techniques.
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 74A
- Drain-Source Resistance (Rds On): 20mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 180 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 200W
Top Features:
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
The IRF4905 is designed to provide extremely low on-resistance per silicon area and fast switching speed. With its ruggedized device design, it is highly efficient and reliable for various applications.
For more details or bulk pricing, contact our sales team at sales02@thansiv.com or +91-8095406416
*Images are for illustration only; actual product may vary.