×
IRF1405 Stripe Planar HEXFET® Power MOSFET
High-efficiency power MOSFET with low on-resistance and fast switching speed
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 169A
- Drain-Source Resistance (Rds On): 5.3mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 260 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 330W
- Packaging: Lead-free
Top Features:
- Advanced process technology
- Ultra low on-resistance
- Fast switching speed
- Repetitive avalanche allowed up to Tjmax
The IRF1405 features a stripe Planar design of HEXFET® Power MOSFETs, utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. With a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating, this MOSFET is an efficient and reliable device suitable for a wide range of applications.
For more detailed information, please refer to the IRF1405 MOSFET Datasheet.
* Images are for illustration only; actual product may vary.