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IRF1404 Seventh Generation HEXFET® Power MOSFET
Advanced technology for efficient and reliable power management in automotive applications.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 40V
- Continuous Drain Current (Id): 202A
- Drain-Source Resistance (Rds On): 4mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 196 nC
- Operating Temperature Range: -55°C to 175°C
- Power Dissipation (Pd): 333W
Top Features:
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
Seventh Generation HEXFET® Power MOSFETs like the IRF1404 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive.
The IRF1404 is automotive qualified (Q101) and fully avalanche rated, making it a versatile choice for power management in demanding environments.
For more details or bulk pricing, reach out to our sales team directly at sales02@thansiv.com or call +91-8095406416.
*Images are for illustration only; actual product may vary.*