IR2112 High Voltage, High Speed Power MOSFET and IGBT Driver
A ruggedized monolithic construction driver with independent high and low side channels.
- VB-High side floating supply voltage: -0.3 to 625 V
- VS- High side floating supply offset voltage: -25 to +0.3 V
- VHO- High side floating output voltage: -0.3 to +0.3 V
- VCC- Low side and logic fixed supply voltage: -0.3 to 25 V
- VLO- Low side output voltage: -0.3 to VCC+0.3 V
- VDD- Logic Supply Voltage: -0.3 to VSS+25 V
Features
- Floating channel for bootstrap operation
- Fully operational up to +600V
- Gate drive supply range: 10 to 20V
- 3.3V logic compatible
The IR2112 is a high voltage, high-speed power MOSFET and IGBT driver that comes with independent high and low side referenced output channels. It uses proprietary HVIC and latch immune CMOS technologies for ruggedized monolithic construction. The logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output drivers have a high pulse current buffer stage designed for minimal driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. The floating channel can drive an N-channel power MOSFET or IGBT in the high-side configuration operating up to 600 volts.
Undervoltage lockout is available for both channels and the driver is equipped with tolerance to negative transient voltage and dV/dt immunity. The device also features a separate logic supply range from 3.3V to 20V, logic and power ground ±5V offset, as well as CMOS Schmitt-triggered inputs with pull-down. The cycle by cycle edge-triggered shutdown logic and matched propagation delay for both channels make it efficient for various applications.
For more details or bulk pricing inquiries, please contact our sales team at sales02@thansiv.com or call +91-8095406416.
*Images are for illustration only; actual product may vary.