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HGTG11N120CND
Non-Punch Through (NPT) IGBT for high voltage switching applications.
- Collector to Emitter Voltage: 1200 V
- Collector Current Continuous (TC = 25°C): 43 A
- Collector Current Continuous (TC = 100°C): 22 A
- Collector Current Pulsed: 80 A
- Gate to Emitter Voltage Continuous: ±20 V
- Gate to Emitter Voltage Pulsed: ±30 V
- Switching Safe Operating Area (TJ = 150°C): 55A at 1200V
- Operating and Storage Junction Temperature Range: -55 to 150 °C
Features:
- 43A, 1200V, TC = 25oC
- 1200V Switching SOA Capability
- Fall Time 340ns at TJ = 150oC
- Short Circuit Rating
This is a new member of the MOS gated high voltage switching IGBT family, combining the best features of MOSFETs and bipolar transistors. It is ideal for applications such as AC and DC motor controls, power supplies, and solenoid drivers.
The IGBT used is the development type TA49291, and the Diode used is the development type TA49189.
For more details or bulk pricing, contact our sales team at sales02@thansiv.com or +91-8095406416.
Images are for illustration only; actual product may vary.