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H11F Photo FET
Gallium-Aluminum-Arsenide IRED Emitting Diode with Silicon Photo Detector
- Parameter: Value
- IF Forward current: 60 mA
- PD Power dissipation: 100 mW
- VR Reverse Voltage: 5 V
- Tstg Storage temperature range: -55 to +150 °C
- TOPR Operating Temperature: -55 to +150 °C
- TSOL Lead Solder Temperature: 260 for 10 sec °C
- F(pk) Forward Current - Peak: 1 A
- BV4-6 Breakdown Voltage: ±30 V
- Related Document: H11F1 IC Data Sheet
Top Features:
- Remote variable resistor
- 100? to 300M?
- 99.9% linearity
- 15 pF shunt capacitance
The H11F series is mounted in dual in-line packages. It acts as an isolated FET for distortion-free control of low-level AC and DC analog signals. With applications like variable resistor and analog switch, it offers a versatile solution for various scenarios.
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As a Variable Resistor:
- Isolated variable attenuator
- Automatic gain control
- Active filter fine-tuning/band switching
-
As an Analog Switch:
- Isolated sample and hold circuit
- Multiplexed, optically isolated A/D conversion
The H11F Photo FET also offers extremely low offset voltage, 60 Vpk-pk signal capability, and no charge injection or latch-up issues. With ton, toff at 15 µS, it ensures efficient performance. It is UL recognized (File #E90700) and VDE recognized (File #E94766) - Ordering option ‘300’ (e.g., H11F1.300).
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*Images are for illustration only; actual product may vary.