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G60N100B2TD
A high-performance 1000V NPT IGBT for hard switching applications
- Collector-emitter voltage: 1000 V
- DC collector current: ±25 V
- Collector Current @ TC = 25°C: 60 A
- Collector Current @ TC = 100°C: 42 A
Features:
- High Speed Switching
- Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
- High Input Impedance
- Built-in Fast Recovery Diode
This 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness, and easy parallel operation. It provides optimum performance for hard switching applications such as UPS and welder applications.
Applications: UPS, Welder
Related Document: G60N100BNTD IGBT Data Sheet
*Images are for illustration only; actual product may vary.