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FDN358P MOSFET - (SMD SOT-23 Package) - 30V 1.5A P-Channel Logic Level Enhancement Mode MOSFET
High-density power field effect transistors for low voltage applications.
- Drain-Source Voltage: -30V
- Gate-Source Voltage: ±20V
- Drain Current – Continuous: -1.5A
- Drain Current – Pulsed: -5A
- Maximum Power Dissipation: 0.5-0.46W
- Operating and Storage Junction Temperature Range: -55 to +150°C
- Package Includes: 1 x FDN358P MOSFET - (SMD SOT-23 Package) - 30V 1.5A P-Channel Logic Level Enhancement Mode MOSFET
Features:
- -1.5 A, -30 V RDS(ON) = 0.125? @ VGS = -10V
- RDS(ON) = 0.20? @ VGS = -4.5V
- Low Gate Charge (7.2nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
Super SOT-23 P-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
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Images are for illustration only; actual product may vary.