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P-Channel Logic Level MOSFET
Advanced low voltage Power Trench process for superior switching performance.
- Drain-Source Voltage: -20V
- Gate-Source Voltage: ±8V
- Drain Current – Continuous: -2A
- Drain Current – Pulsed: -10A
- Maximum Power Dissipation: 0.5-0.46W
- Operating and Storage Junction Temperature Range: -55 to +150°C
- Package Includes: 1 x FDN340P MOSFET - (SMD SOT-23 Package) - 20V 2A P-Channel Logic Level MOSFET
Features:
- 1.6 A, -20 V RDS(ON) = 70 m? @ VGS = -4.5V
- RDS(ON) = 110 m? @ VGS = -2.5V
- Low Gate Charge (7.2nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
This P-Channel Logic Level MOSFET is produced using an advanced low voltage Power Trench process tailored to minimize on-state resistance while maintaining low gate charge for superior switching performance. Ideal for portable electronics applications such as load switching, power management, battery charging circuits, and dc-dc conversion.
Applications:
- Battery management
- Load switch
- Battery protection
Need more details or interested in bulk pricing? Reach out to our sales team directly - sales02@thansiv.com +91-8095406416
Images are for illustration only; actual product may vary.